PART |
Description |
Maker |
HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM - 256Mb 64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
EDJ1104BBSE-DG-F EDJ1104BBSE-DJ-F EDJ1108BBSE-DJ-F |
1G bits DDR3 SDRAM 256M X 4 DDR DRAM, 0.4 ns, PBGA78 256M X 4 DDR DRAM, 0.3 ns, PBGA78
|
Elpida Memory ELPIDA MEMORY INC
|
HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb 256M-P DDR SDRAM IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor http://
|
HY5DU56422BT-D4 HY5DU56422BT-D43 HY5DU56422BT-J HY |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M DDR SDRAM - 256Mb
|
Hynix Semiconductor, Inc.
|
H5PS1G63EFR H5PS1G43EFR H5PS1G83EFR H5PS1G43EFR-E3 |
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, PBGA60 128M X 8 DDR DRAM, PBGA60
|
http:// HYNIX SEMICONDUCTOR INC
|
HY5DU56422ALT-K HY5DU56422ALT-J HY5DU56822ALT-J HY |
256M-S DDR SDRAM 64M X 4 DDR DRAM, 0.7 ns, PDSO66 256M-S DDR SDRAM 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
H5TQ1G63DFR-12C H5TQ1G63DFR-N0C H5TQ1G63DFR-11C |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
K4B1G1646C-ZCF7 K4B1G0846C-ZCF7 K4B1G0446C-ZCF7 K4 |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
K4B1G1646C-ZCG9 K4B1G0846C-ZCG9 K4B1G0446C-ZCG9 |
1Gb C-die DDR3 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMD212G726ALS4-H HYMD212G726ALS4-K HYMD212G726ALS |
128Mx72|2.5V|M/K/H/L|x36|DDR SDRAM - Registered DIMM 1GB 128Mx72 | 2.5V的| /升| x36 | DDR SDRAM内存-内存1GB的注 Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|